Description
Power transistor
Place of Origin
Guangdong, China
Operating Temperature
Standard
Supplier Type
original manufacturer, ODM, agency, retailer, Other
Media Available
datasheet, Photo, EDA/CAD Models, Other
Current - Collector (Ic) (Max)
Standard
Voltage - Collector Emitter Breakdown (Max)
Standard
Vce Saturation (Max) @ Ib, Ic
Standard
Current - Collector Cutoff (Max)
Standard
DC Current Gain (hFE) (Min) @ Ic, Vce
Standard
Frequency - Transition
Standard
Resistor - Base (R1)
Standard
Resistor - Emitter Base (R2)
Standard
Drain to Source Voltage (Vdss)
Standard
Current - Continuous Drain (Id) @ 25°C
Standard
Rds On (Max) @ Id, Vgs
Standard
Vgs(th) (Max) @ Id
Standard
Gate Charge (Qg) (Max) @ Vgs
Standard
Input Capacitance (Ciss) (Max) @ Vds
Standard
Current Rating (Amps)
Standard
Drive Voltage (Max Rds On, Min Rds On)
Standard
Vce(on) (Max) @ Vge, Ic
Standard
Input Capacitance (Cies) @ Vce
Standard
Voltage - Breakdown (V(BR)GSS)
Standard
Current - Drain (Idss) @ Vds (Vgs=0)
Standard
Current Drain (Id) - Max
Standard
Voltage - Cutoff (VGS off) @ Id
Standard
Resistance - RDS(On)
Standard
Voltage - Output
Standard
Voltage - Offset (Vt)
Standard
Current - Gate to Anode Leakage (Igao)
Standard
Current - Valley (Iv)
Standard
Applications
GENERAL PURPOSE
Transistor Type
N-Channel JFET
Moisture Sensitivity Level (MSL)
3 (168 Hours)
packing
Tray, Reel, Packing foam, Box
Payment Ways
TT \ VISA \ MoneyGram \ PAYPAL \ Escrow
