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S ic chip Integrated Circuit SIZ998BDT-T1-GE3 mosfet arrays electronic components

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Shenzhen HYST Technology Co., Ltd. Multispecialty supplier 16 yrs CN
S ic chip Integrated Circuit SIZ998BDT-T1-GE3 mosfet arrays electronic components
S ic chip Integrated Circuit SIZ998BDT-T1-GE3 mosfet arrays electronic components
S ic chip Integrated Circuit SIZ998BDT-T1-GE3 mosfet arrays electronic components
S ic chip Integrated Circuit SIZ998BDT-T1-GE3 mosfet arrays electronic components
S ic chip Integrated Circuit SIZ998BDT-T1-GE3 mosfet arrays electronic components
S ic chip Integrated Circuit SIZ998BDT-T1-GE3 mosfet arrays electronic components

Key attributes

Industry-specific attributes

Model Number
SIZ998BDT-T1-GE3
Type
MOSFET 
Brand Name
Original manufacturer
Package Type
Surface Mount

Other attributes

Mounting Type
Surface Mount
Description
transistors fets mosfets arrays
Place of Origin
Taiwan, China
Package / Case
8-PowerWDFN
Type
2 N-Channel (Dual), Schottky
Operating Temperature
-55°C 150°C
Series
-
D/C
New Date code
Application
-
Supplier Type
N-Channel
Cross Reference
-
Media Available
datasheet, Photo
Brand
Original manufacturer
Current - Collector (Ic) (Max)
-standard
Voltage - Collector Emitter Breakdown (Max)
-standard
Vce Saturation (Max) @ Ib, Ic
-standard
Current - Collector Cutoff (Max)
-standard
DC Current Gain (hFE) (Min) @ Ic, Vce
-standard
Power - Max
3.8W, 20W (Tc), 4.8W, 32.9W (Tc)
Frequency - Transition
-
Operating Temperature
-55°C 150°C
Mounting Type
Surface Mount
Resistor - Base (R1)
-standard
Resistor - Emitter Base (R2)
-standard
FET Type
-standard
FET Feature
-standard
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
23.7A, 54.8A (Tc), 36.2A, 94.6A (Tc)
Rds On (Max) @ Id, Vgs
-standard
Vgs(th) (Max) @ Id
-standard
Gate Charge (Qg) (Max) @ Vgs
18nC 10V, 46.7nC 10V
Input Capacitance (Ciss) (Max) @ Vds
790pF 15V, 2130pF 15V
Frequency
-standard
Current Rating (Amps)
-
Noise Figure
-
Power - Output
-
Voltage - Rated
-
Drive Voltage (Max Rds On, Min Rds On)
-standard
Vgs (Max)
2.2V 250uA
IGBT Type
-
Configuration
-standard
Vce(on) (Max) @ Vge, Ic
-standard
Input Capacitance (Cies) @ Vce
-standard
Input
-standard
NTC Thermistor
-standard
Voltage - Breakdown (V(BR)GSS)
-standard
Current - Drain (Idss) @ Vds (Vgs=0)
-standard
Current Drain (Id) - Max
-standard
Voltage - Cutoff (VGS off) @ Id
-standard
Resistance - RDS(On)
4.39mOhm 15A, 10V, 2.4mOhm 19A, 10V
Voltage
-
Voltage - Output
-standard
Voltage - Offset (Vt)
-standard
Current - Gate to Anode Leakage (Igao)
-standard
Current - Valley (Iv)
-standard
Current - Peak
-standard
Applications
-
Transistor Type
2 N-Channel (Dual), Schottky
Service
One Stop Bom Service
Supplier
Electronic Components
Shipping by
DHL\UPS\Fedex\TNT\EMS\SFor Other
Condition
Original manufacturer
Lead Free Status
RoHS Compliant
Location
Shenzhen
Payment
Paypal\TT\Western Union\Trade Assurance
MOQ
1 Pcs
Warranty
90 day

Packaging and delivery

Selling Units:
Single item
Single package size:
XX cm
Single gross weight:
kg

Lead time

Product descriptions from the supplier

1 - 99 pieces
$0.49
>= 100 pieces
$0.39

Variations

Total options:

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